BUK7M19-60EX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

60V

Rds On (Max) @ Id, Vgs :

19m Ω @ 10A, 10V

Pulsed Drain Current-Max (IDM) :

143A

Drain-source On Resistance-Max :

0.019Ohm

Pin Count :

8

Power Dissipation-Max :

55W Tc

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Number of Elements :

1

Reference Standard :

AEC-Q101; IEC-60134

Gate Charge (Qg) (Max) @ Vgs :

17.3nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

Automotive, AEC-Q101, TrenchMOS™

Published :

2016

Input Capacitance (Ciss) (Max) @ Vds :

1055pF @ 25V

Package / Case :

SOT-1210, 8-LFPAK33

Transistor Application :

SWITCHING

Factory Lead Time :

26 Weeks

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G4

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

4

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

60V

Vgs(th) (Max) @ Id :

4V @ 1mA

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

35.8A Tc

Drain Current-Max (Abs) (ID) :

36A

Avalanche Energy Rating (Eas) :

21.1 mJ

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

35.8A

Packaging :

Tape and Reel (TR)