BUK7M15-60EX
- Mfr.Part #
- BUK7M15-60EX
- Manufacturer
- Nexperia
- Package / Case
- SOT-1210, 8-LFPAK33
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 42.9A LFPAK33
- Stock
- 39,021
- In Stock :
- 39,021
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- DS Breakdown Voltage-Min :
- 60V
- Operating Temperature :
- -55°C~175°C TJ
- Avalanche Energy Rating (Eas) :
- 26.5 mJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 62W Tc
- Factory Lead Time :
- 26 Weeks
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 42.9A
- Terminal Form :
- Gull wing
- Drain to Source Voltage (Vdss) :
- 60V
- Series :
- Automotive, AEC-Q101
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- SOT-1210, 8-LFPAK33
- Pulsed Drain Current-Max (IDM) :
- 171A
- JESD-609 Code :
- e3
- Input Capacitance (Ciss) (Max) @ Vds :
- 1262pF @ 25V
- JESD-30 Code :
- R-PSSO-G4
- Terminal Position :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 42.9A Tc
- Case Connection :
- DRAIN
- Reach Compliance Code :
- not_compliant
- Terminal Finish :
- Matte Tin (Sn)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Published :
- 2016
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 8
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Vgs (Max) :
- ±20V
- Drain Current-Max (Abs) (ID) :
- 43A
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 19.4nC @ 10V
- Number of Terminations :
- 4
- Rds On (Max) @ Id, Vgs :
- 15m Ω @ 10A, 10V
- Reference Standard :
- AEC-Q101; IEC-60134
- Packaging :
- Tape and Reel (TR)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- Drain-source On Resistance-Max :
- 0.015Ohm
- Datasheets
- BUK7M15-60EX

N-Channel Tape & Reel (TR) 15m Ω @ 10A, 10V ±20V 1262pF @ 25V 19.4nC @ 10V 60V SOT-1210, 8-LFPAK33
BUK7M15-60EX Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 26.5 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1262pF @ 25V.This device conducts a continuous drain current (ID) of 42.9A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 43A.Pulsed drain current is maximum rated peak drain current 171A.A normal operation of the DS requires keeping the breakdown voltage above 60V.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
BUK7M15-60EX Features
the avalanche energy rating (Eas) is 26.5 mJ
a continuous drain current (ID) of 42.9A
based on its rated peak drain current 171A.
a 60V drain to source voltage (Vdss)
BUK7M15-60EX Applications
There are a lot of Nexperia USA Inc.
BUK7M15-60EX applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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