BUK7M10-40EX
- Mfr.Part #
- BUK7M10-40EX
- Manufacturer
- Nexperia
- Package / Case
- SOT-1210, 8-LFPAK33
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 56A LFPAK33
- Stock
- 2,670
- In Stock :
- 2,670
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- Single
- Pulsed Drain Current-Max (IDM) :
- 224A
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 4
- Max Junction Temperature (Tj) :
- 175°C
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 8
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 5.7 ns
- JESD-30 Code :
- R-PSSO-G4
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 56A
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate to Source Voltage (Vgs) :
- 20V
- Series :
- Automotive, AEC-Q101
- Reach Compliance Code :
- not_compliant
- Factory Lead Time :
- 26 Weeks
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Terminal Finish :
- Matte Tin (Sn)
- Current - Continuous Drain (Id) @ 25°C :
- 56A Tc
- Published :
- 2016
- Package / Case :
- SOT-1210, 8-LFPAK33
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~175°C TJ
- Number of Channels :
- 1
- Power Dissipation-Max :
- 62W Tc
- Packaging :
- Tape and Reel (TR)
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 14.4 ns
- Drain to Source Breakdown Voltage :
- 40V
- Mounting Type :
- Surface Mount
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 19.5nC @ 10V
- Power Dissipation :
- 62W
- Rds On (Max) @ Id, Vgs :
- 10m Ω @ 15A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 1231pF @ 25V
- Height :
- 900μm
- Avalanche Energy Rating (Eas) :
- 30.6 mJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- BUK7M10-40EX

N-Channel Tape & Reel (TR) 10m Ω @ 15A, 10V ±20V 1231pF @ 25V 19.5nC @ 10V SOT-1210, 8-LFPAK33
BUK7M10-40EX Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 30.6 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1231pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 40V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 40V.As a result of its turn-off delay time, which is 14.4 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 224A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 5.7 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (10V).
BUK7M10-40EX Features
the avalanche energy rating (Eas) is 30.6 mJ
a continuous drain current (ID) of 56A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 14.4 ns
based on its rated peak drain current 224A.
BUK7M10-40EX Applications
There are a lot of Nexperia USA Inc.
BUK7M10-40EX applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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