BUK7K89-100EX

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

SOT-1205, 8-LFPAK56

Input Capacitance (Ciss) (Max) @ Vds :

811pF @ 25V

Number of Terminations :

6

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-G6

Drain to Source Voltage (Vdss) :

100V

Vgs(th) (Max) @ Id :

4V @ 1mA

FET Type :

2 N-Channel (Dual)

Pin Count :

8

Reference Standard :

AEC-Q101; IEC-60134

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation :

38W

Mount :

Surface Mount

Transistor Element Material :

SILICON

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

19.5 mJ

Mounting Type :

Surface Mount

Published :

2015

Number of Pins :

8

Gate Charge (Qg) (Max) @ Vgs :

13.6nC @ 10V

Number of Elements :

2

DS Breakdown Voltage-Min :

100V

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power - Max :

38W

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

51A

Rds On (Max) @ Id, Vgs :

82.5m Ω @ 5A, 10V

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

13A

FET Feature :

Standard

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

12 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED