BUK7J1R0-40HX

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Mfr.Part #
BUK7J1R0-40HX
Manufacturer
Nexperia
Package / Case
Datasheet
Download
Description
BUK7J1R0-40H/SOT1023/4 LEADS
Stock
2,924
In Stock :
2,924

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Manufacturer :
Nexperia
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-30 Code :
R-PSSO-G4
Drain Current-Max (Abs) (ID) :
220A
Avalanche Energy Rating (Eas) :
242 mJ
Packaging :
Tape and Reel (TR)
Surface Mount :
yes
Configuration :
SINGLE WITH BUILT-IN DIODE
Reference Standard :
AEC-Q101; IEC-60134
Polarity/Channel Type :
N-Channel
Number of Elements :
1
FET Technology :
METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min :
40V
Drain-source On Resistance-Max :
0.001ohm
Operating Temperature (Max) :
175°C
Factory Lead Time :
16 Weeks
Transistor Element Material :
SILICON
Reach Compliance Code :
Compliant
Number of Terminations :
4
Pin Count :
4
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Mode :
ENHANCEMENT MODE
Case Connection :
DRAIN
Transistor Application :
SWITCHING
Terminal Position :
Single
Terminal Form :
Gull wing
Operating Temperature (Min) :
-55°C
Pulsed Drain Current-Max (IDM) :
600A
Datasheets
BUK7J1R0-40HX
Introducing Transistors - FETs, MOSFETs - Single Nexperia BUK7J1R0-40HX from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:4, BUK7J1R0-40HX pinout, BUK7J1R0-40HX datasheet PDF, BUK7J1R0-40HX amp .Beyond Transistors - FETs, MOSFETs - Single Nexperia BUK7J1R0-40HX ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



Tape & Reel (TR)

BUK7J1R0-40HX Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 242 mJ.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 220A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 600A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 40V in order to maintain normal operation.

BUK7J1R0-40HX Features


the avalanche energy rating (Eas) is 242 mJ
based on its rated peak drain current 600A.


BUK7J1R0-40HX Applications


There are a lot of Nexperia USA Inc.
BUK7J1R0-40HX applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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