BUK7E5R2-100E,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

37 ns

Vgs(th) (Max) @ Id :

4V @ 1mA

Element Configuration :

Single

Packaging :

Tube

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Weight :

2.299997g

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Number of Elements :

1

Turn-Off Delay Time :

158 ns

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Series :

Automotive, AEC-Q101, TrenchMOS™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Dual Supply Voltage :

100V

Additional Feature :

AVALANCHE RATED

Drain-source On Resistance-Max :

0.0052Ohm

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Number of Pins :

3

Vgs (Max) :

±20V

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

80 ns

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

11810pF @ 25V

Rise Time :

62ns

Rds On (Max) @ Id, Vgs :

5.2m Ω @ 25A, 10V

Number of Channels :

1

Mounting Type :

Through Hole

Surface Mount :

No

Power Dissipation-Max :

349W Tc

Continuous Drain Current (ID) :

120A

Factory Lead Time :

12 Weeks

Drain to Source Breakdown Voltage :

100V

Published :

2012