BUK7E4R6-60E,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

23 ns

Rds On (Max) @ Id, Vgs :

4.6m Ω @ 25A, 10V

Continuous Drain Current (ID) :

100A

Packaging :

Tube

Vgs (Max) :

±20V

Max Dual Supply Voltage :

60V

Pin Count :

3

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Reach Compliance Code :

not_compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Number of Elements :

1

Case Connection :

DRAIN

Mounting Type :

Through Hole

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Number of Pins :

3

Surface Mount :

No

Additional Feature :

AVALANCHE RATED

Turn-Off Delay Time :

50 ns

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

6230pF @ 25V

Drain-source On Resistance-Max :

0.0046Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

40 ns

Published :

2012

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Gate Charge (Qg) (Max) @ Vgs :

82nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 1mA

Number of Terminations :

3

Terminal Finish :

Tin (Sn)

Factory Lead Time :

12 Weeks

Series :

Automotive, AEC-Q101, TrenchMOS™

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

234W Tc

Operating Temperature :

-55°C~175°C TJ

Rise Time :

39ns

Transistor Element Material :

SILICON