BUK7E4R6-60E,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Reach Compliance Code :

not_compliant

Series :

Automotive, AEC-Q101, TrenchMOS™

Transistor Element Material :

SILICON

Factory Lead Time :

12 Weeks

Terminal Position :

Single

Number of Elements :

1

Fall Time (Typ) :

40 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Turn-Off Delay Time :

50 ns

Max Dual Supply Voltage :

60V

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Surface Mount :

No

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.0046Ohm

Gate Charge (Qg) (Max) @ Vgs :

82nC @ 10V

Power Dissipation-Max :

234W Tc

Vgs(th) (Max) @ Id :

4V @ 1mA

Rise Time :

39ns

Rds On (Max) @ Id, Vgs :

4.6m Ω @ 25A, 10V

Operating Temperature :

-55°C~175°C TJ

Published :

2012

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Additional Feature :

AVALANCHE RATED

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Continuous Drain Current (ID) :

100A

Input Capacitance (Ciss) (Max) @ Vds :

6230pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tube

Turn On Delay Time :

23 ns

Terminal Finish :

Tin (Sn)

Pin Count :

3