BUK7E3R5-60E,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

114nC @ 10V

Surface Mount :

No

Turn-Off Delay Time :

68 ns

Turn On Delay Time :

28 ns

Max Dual Supply Voltage :

60V

Published :

2012

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

785A

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

404 mJ

Mounting Type :

Through Hole

Additional Feature :

AVALANCHE RATED

Continuous Drain Current (ID) :

120A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Factory Lead Time :

12 Weeks

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

49 ns

Input Capacitance (Ciss) (Max) @ Vds :

8920pF @ 25V

Number of Pins :

3

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Vgs(th) (Max) @ Id :

4V @ 1mA

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 25A, 10V

Reach Compliance Code :

not_compliant

Rise Time :

45ns

FET Type :

N-Channel

Power Dissipation-Max :

293W Tc

Power Dissipation :

293W

Packaging :

Tube

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Number of Terminations :

3

Series :

Automotive, AEC-Q101, TrenchMOS™

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)