BUK7E3R1-40E,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

29ns

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

40V

JESD-609 Code :

e3

Max Dual Supply Voltage :

40V

Transistor Application :

SWITCHING

Turn-Off Delay Time :

54 ns

Vgs(th) (Max) @ Id :

4V @ 1mA

Case Connection :

DRAIN

Number of Elements :

1

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

No

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Channels :

1

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

6200pF @ 25V

Additional Feature :

AVALANCHE RATED

Rds On (Max) @ Id, Vgs :

3.1m Ω @ 25A, 10V

Power Dissipation-Max :

234W Tc

Fall Time (Typ) :

32 ns

Factory Lead Time :

12 Weeks

Packaging :

Tube

Element Configuration :

Single

Continuous Drain Current (ID) :

100A

Pin Count :

3

Published :

2012

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Series :

Automotive, AEC-Q101, TrenchMOS™

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

79nC @ 10V

Pulsed Drain Current-Max (IDM) :

798A

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

24 ns

Terminal Finish :

Tin (Sn)

Reach Compliance Code :

not_compliant

Mounting Type :

Through Hole

Weight :

2.299997g