BUK7E2R6-60E,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

12 Weeks

Transistor Element Material :

SILICON

Pin Count :

3

Vgs (Max) :

±20V

Published :

2012

Turn-Off Delay Time :

130 ns

Reach Compliance Code :

not_compliant

Input Capacitance (Ciss) (Max) @ Vds :

11180pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Continuous Drain Current (ID) :

120A

Rise Time :

50ns

Additional Feature :

AVALANCHE RATED

Fall Time (Typ) :

71 ns

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

2.6m Ω @ 25A, 10V

Gate Charge (Qg) (Max) @ Vgs :

158nC @ 10V

Pulsed Drain Current-Max (IDM) :

995A

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

120A Tc

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

660 mJ

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4V @ 1mA

Drain-source On Resistance-Max :

0.0026Ohm

Packaging :

Tube

Turn On Delay Time :

36 ns

Power Dissipation-Max :

349W Tc

Surface Mount :

No

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Max Dual Supply Voltage :

60V

Terminal Finish :

Tin (Sn)

Series :

Automotive, AEC-Q101, TrenchMOS™