BUK7E2R3-40E,127
- Mfr.Part #
- BUK7E2R3-40E,127
- Manufacturer
- Nexperia
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 120A I2PAK
- Stock
- 7,882
- In Stock :
- 7,882
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 293W Tc
- Number of Terminations :
- 3
- Max Dual Supply Voltage :
- 40V
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 46 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Power Dissipation :
- 293W
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Case Connection :
- DRAIN
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- N-Channel
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Temperature :
- -55°C~175°C TJ
- Reach Compliance Code :
- not_compliant
- Terminal Position :
- Single
- Number of Pins :
- 3
- Surface Mount :
- No
- Terminal Finish :
- Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 12 Weeks
- Packaging :
- Tube
- Additional Feature :
- AVALANCHE RATED
- Rds On (Max) @ Id, Vgs :
- 2.3m Ω @ 25A, 10V
- Published :
- 2012
- Turn On Delay Time :
- 29 ns
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 79 ns
- Avalanche Energy Rating (Eas) :
- 622 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 109.2nC @ 10V
- Continuous Drain Current (ID) :
- 120A
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 8500pF @ 25V
- Pin Count :
- 3
- Rise Time :
- 36ns
- Datasheets
- BUK7E2R3-40E,127
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N-Channel Tube 2.3m Ω @ 25A, 10V ±20V 8500pF @ 25V 109.2nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
BUK7E2R3-40E,127 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 622 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 8500pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 120A amps.It is [79 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 29 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 40V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (10V).
BUK7E2R3-40E,127 Features
the avalanche energy rating (Eas) is 622 mJ
a continuous drain current (ID) of 120A
the turn-off delay time is 79 ns
BUK7E2R3-40E,127 Applications
There are a lot of Nexperia USA Inc.
BUK7E2R3-40E,127 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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