BUK7E1R9-40E,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

324W Tc

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Series :

Automotive, AEC-Q101, TrenchMOS™

Case Connection :

DRAIN

Number of Pins :

3

Transistor Element Material :

SILICON

FET Type :

N-Channel

Element Configuration :

Single

Rise Time :

49ns

Reach Compliance Code :

not_compliant

Factory Lead Time :

12 Weeks

Number of Elements :

1

Fall Time (Typ) :

52 ns

Pin Count :

3

Additional Feature :

AVALANCHE RATED

Vgs (Max) :

±20V

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube

Max Dual Supply Voltage :

40V

Weight :

2.387001g

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

1.9m Ω @ 25A, 10V

Number of Channels :

1

Published :

2016

Turn-Off Delay Time :

87 ns

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

40V

Continuous Drain Current (ID) :

120A

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds :

9700pF @ 25V

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

35 ns

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Gate Charge (Qg) (Max) @ Vgs :

118nC @ 10V

Surface Mount :

No