BUK7C10-75AITE,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

75V

Operating Temperature :

-55°C~175°C TJ

Pin Count :

7

Case Connection :

DRAIN

Surface Mount :

yes

Turn On Delay Time :

35 ns

Series :

Automotive, AEC-Q101, TrenchMOS™

Number of Pins :

7

Power Dissipation :

272W

Factory Lead Time :

12 Weeks

JESD-609 Code :

e3

Number of Terminations :

6

Pulsed Drain Current-Max (IDM) :

456A

Power Dissipation-Max :

272W Tc

JESD-30 Code :

R-PSSO-G6

Published :

2008

Number of Elements :

1

Element Configuration :

Single

Rise Time :

108ns

FET Feature :

Current Sensing

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

75A

Gate Charge (Qg) (Max) @ Vgs :

121nC @ 10V

Vgs (Max) :

±20V

Package / Case :

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

10m Ω @ 50A, 10V

Contact Plating :

Tin

Max Dual Supply Voltage :

75V

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

FET Type :

N-Channel

Mounting Type :

Surface Mount

Turn-Off Delay Time :

185 ns

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 1mA

Packaging :

Tape and Reel (TR)

RoHS Status :

RoHS Compliant

Radiation Hardening :

No

Fall Time (Typ) :

100 ns

Input Capacitance (Ciss) (Max) @ Vds :

4700pF @ 25V