BUK7C10-75AITE,118

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

4700pF @ 25V

ECCN Code :

EAR99

JESD-30 Code :

R-PSSO-G6

Gate Charge (Qg) (Max) @ Vgs :

121nC @ 10V

Transistor Application :

SWITCHING

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

456A

Continuous Drain Current (ID) :

75A

Element Configuration :

Single

Power Dissipation :

272W

Gate to Source Voltage (Vgs) :

20V

Published :

2008

Turn-Off Delay Time :

185 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

7

Mounting Type :

Surface Mount

Rise Time :

108ns

FET Feature :

Current Sensing

Rds On (Max) @ Id, Vgs :

10m Ω @ 50A, 10V

JESD-609 Code :

e3

Radiation Hardening :

No

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 1mA

Packaging :

Tape and Reel (TR)

Factory Lead Time :

12 Weeks

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Power Dissipation-Max :

272W Tc

Contact Plating :

Tin

Series :

Automotive, AEC-Q101, TrenchMOS™

Fall Time (Typ) :

100 ns

Terminal Form :

Gull wing

Number of Pins :

7

RoHS Status :

RoHS Compliant

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Number of Terminations :

6

Max Dual Supply Voltage :

75V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Turn On Delay Time :

35 ns

Drain to Source Breakdown Voltage :

75V