BUK7C06-40AITE,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Max Dual Supply Voltage :

40V

Turn On Delay Time :

35 ns

Contact Plating :

Tin

Published :

2008

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.006Ohm

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

4300pF @ 25V

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

6m Ω @ 50A, 10V

Pin Count :

7

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

110 ns

Number of Terminations :

6

JESD-30 Code :

R-PSSO-G6

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Number of Pins :

7

FET Feature :

Current Sensing

Series :

Automotive, AEC-Q101, TrenchMOS™

Package / Case :

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Power Dissipation :

272W

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

620A

RoHS Status :

RoHS Compliant

Turn-Off Delay Time :

155 ns

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Power Dissipation-Max :

272W Tc

Drain to Source Breakdown Voltage :

40V

ECCN Code :

EAR99

Surface Mount :

yes

Vgs(th) (Max) @ Id :

4V @ 1mA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

155A

Rise Time :

115ns

Case Connection :

DRAIN

Radiation Hardening :

No

Mounting Type :

Surface Mount