BUK7909-75ATE127
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- Mfr.Part #
- BUK7909-75ATE127
- Manufacturer
- Nexperia
- Package / Case
- TO-220-5
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 15,219
- In Stock ：
- 15,219
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-609 Code :
- e3
- Max Dual Supply Voltage :
- 75V
- Fall Time (Typ) :
- 100 ns
- Power Dissipation :
- 272W
- Case Connection :
- DRAIN
- Power Dissipation-Max :
- 272W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 121nC @ 10V
- Radiation Hardening :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Turn On Delay Time :
- 35 ns
- Package / Case :
- TO-220-5
- Surface Mount :
- No
- Packaging :
- Tube
- Pin Count :
- 5
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 5
- Number of Pins :
- 5
- Number of Elements :
- 1
- Drain-source On Resistance-Max :
- 0.009Ohm
- Rise Time :
- 108ns
- Published :
- 2008
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 50A, 10V
- Turn-Off Delay Time :
- 185 ns
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 12 Weeks
- Pulsed Drain Current-Max (IDM) :
- 480A
- Contact Plating :
- Tin
- FET Type :
- N-Channel
- RoHS Status :
- RoHS Compliant
- FET Feature :
- Temperature Sensing Diode
- Operating Temperature :
- -55°C~175°C TJ
- Avalanche Energy Rating (Eas) :
- 739 mJ
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4700pF @ 25V
- Transistor Element Material :
- SILICON
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Drain to Source Breakdown Voltage :
- 75V
- Continuous Drain Current (ID) :
- 120A
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Datasheets
- BUK7909-75ATE127
N-Channel Tube 9m Ω @ 50A, 10V ±20V 4700pF @ 25V 121nC @ 10V TO-220-5
BUK7909-75ATE,127 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 739 mJ.A device's maximal input capacitance is 4700pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 120A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 75V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 185 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 480A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 35 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.By using 75V, it can supply the maximum voltage from two sources.This device reduces its overall power consumption by using drive voltage (10V).
BUK7909-75ATE,127 Features
the avalanche energy rating (Eas) is 739 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 185 ns
based on its rated peak drain current 480A.
BUK7909-75ATE,127 Applications
There are a lot of Nexperia USA Inc.
BUK7909-75ATE,127 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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