BUK7909-75ATE,127
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- Mfr.Part #
- BUK7909-75ATE,127
- Manufacturer
- Nexperia
- Package / Case
- TO-220-5
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 75A TO220-5
- Stock
- 47,104
- In Stock ：
- 47,104
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Pin Count :
- 5
- FET Feature :
- Temperature Sensing Diode
- Drain to Source Breakdown Voltage :
- 75V
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 121nC @ 10V
- Rise Time :
- 108ns
- Element Configuration :
- Single
- Max Dual Supply Voltage :
- 75V
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- No
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 50A, 10V
- Number of Pins :
- 5
- Turn On Delay Time :
- 35 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Power Dissipation-Max :
- 272W Tc
- RoHS Status :
- RoHS Compliant
- Pulsed Drain Current-Max (IDM) :
- 480A
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Published :
- 2008
- Mounting Type :
- Through Hole
- Number of Terminations :
- 5
- Factory Lead Time :
- 12 Weeks
- Continuous Drain Current (ID) :
- 120A
- Fall Time (Typ) :
- 100 ns
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Packaging :
- Tube
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 20V
- Radiation Hardening :
- No
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Vgs (Max) :
- ±20V
- Drain-source On Resistance-Max :
- 0.009Ohm
- Package / Case :
- TO-220-5
- Avalanche Energy Rating (Eas) :
- 739 mJ
- Turn-Off Delay Time :
- 185 ns
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 4700pF @ 25V
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation :
- 272W
- Datasheets
- BUK7909-75ATE,127
N-Channel Tube 9m Ω @ 50A, 10V ±20V 4700pF @ 25V 121nC @ 10V TO-220-5
BUK7909-75ATE,127 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 739 mJ.A device's maximal input capacitance is 4700pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 120A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 75V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 185 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 480A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 35 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.By using 75V, it can supply the maximum voltage from two sources.This device reduces its overall power consumption by using drive voltage (10V).
BUK7909-75ATE,127 Features
the avalanche energy rating (Eas) is 739 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 185 ns
based on its rated peak drain current 480A.
BUK7909-75ATE,127 Applications
There are a lot of Nexperia USA Inc.
BUK7909-75ATE,127 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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