BUK7907-55ATE127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

272W

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

4V @ 1mA

Avalanche Energy Rating (Eas) :

460 mJ

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 25V

Surface Mount :

No

Power Dissipation-Max :

272W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

12 Weeks

Package / Case :

TO-220-5

Turn-Off Delay Time :

159 ns

Continuous Drain Current (ID) :

140A

Number of Terminations :

5

ECCN Code :

EAR99

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Drain-source On Resistance-Max :

0.007Ohm

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

116nC @ 10V

JESD-609 Code :

e3

RoHS Status :

RoHS Compliant

Pin Count :

5

Case Connection :

DRAIN

Number of Elements :

1

Series :

Automotive, AEC-Q101, TrenchMOS™

Max Dual Supply Voltage :

55V

Published :

2008

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Rise Time :

115ns

Drain to Source Breakdown Voltage :

55V

Number of Pins :

5

Fall Time (Typ) :

111 ns

Contact Plating :

Tin

FET Feature :

Temperature Sensing Diode

Packaging :

Tube

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Rds On (Max) @ Id, Vgs :

7m Ω @ 50A, 10V

Turn On Delay Time :

36 ns