BUK7907-55ATE,127
- Mfr.Part #
- BUK7907-55ATE,127
- Manufacturer
- Nexperia
- Package / Case
- TO-220-5
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 75A TO220-5
- Stock
- 3,490
- In Stock :
- 3,490
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 12 Weeks
- Published :
- 2008
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- RoHS Status :
- RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 4500pF @ 25V
- Turn On Delay Time :
- 36 ns
- ECCN Code :
- EAR99
- Power Dissipation :
- 272W
- Gate Charge (Qg) (Max) @ Vgs :
- 116nC @ 10V
- Drain to Source Breakdown Voltage :
- 55V
- Package / Case :
- TO-220-5
- Contact Plating :
- Tin
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Element Configuration :
- Single
- Rise Time :
- 115ns
- Number of Elements :
- 1
- FET Feature :
- Temperature Sensing Diode
- Pin Count :
- 5
- Rds On (Max) @ Id, Vgs :
- 7m Ω @ 50A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 140A
- Surface Mount :
- No
- Power Dissipation-Max :
- 272W Tc
- Max Dual Supply Voltage :
- 55V
- Drain-source On Resistance-Max :
- 0.007Ohm
- Case Connection :
- DRAIN
- Operating Temperature :
- -55°C~175°C TJ
- Avalanche Energy Rating (Eas) :
- 460 mJ
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Number of Pins :
- 5
- Mounting Type :
- Through Hole
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Number of Terminations :
- 5
- Turn-Off Delay Time :
- 159 ns
- Vgs (Max) :
- ±20V
- Fall Time (Typ) :
- 111 ns
- Packaging :
- Tube
- Datasheets
- BUK7907-55ATE,127

N-Channel Tube 7m Ω @ 50A, 10V ±20V 4500pF @ 25V 116nC @ 10V TO-220-5
BUK7907-55ATE,127 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 460 mJ.A device's maximal input capacitance is 4500pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 140A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 55V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 159 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 36 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.By using 55V, it can supply the maximum voltage from two sources.This device reduces its overall power consumption by using drive voltage (10V).
BUK7907-55ATE,127 Features
the avalanche energy rating (Eas) is 460 mJ
a continuous drain current (ID) of 140A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 159 ns
BUK7907-55ATE,127 Applications
There are a lot of Nexperia USA Inc.
BUK7907-55ATE,127 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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