BUK7905-40AI127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

40V

Case Connection :

DRAIN

Power Dissipation-Max :

272W Tc

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Surface Mount :

No

Operating Mode :

ENHANCEMENT MODE

Contact Plating :

Tin

Vgs(th) (Max) @ Id :

4V @ 1mA

JESD-609 Code :

e3

Number of Pins :

5

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

620A

Gate Charge (Qg) (Max) @ Vgs :

127nC @ 10V

FET Feature :

Current Sensing

Factory Lead Time :

12 Weeks

Transistor Application :

SWITCHING

Turn On Delay Time :

35 ns

Series :

Automotive, AEC-Q101, TrenchMOS™

Element Configuration :

Single

Package / Case :

TO-220-5

Vgs (Max) :

±20V

Pin Count :

5

Turn-Off Delay Time :

155 ns

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

272W

Max Dual Supply Voltage :

40V

Fall Time (Typ) :

110 ns

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

5m Ω @ 50A, 10V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Input Capacitance (Ciss) (Max) @ Vds :

5000pF @ 25V

Radiation Hardening :

No

Rise Time :

115ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

155A

Published :

2008

Number of Terminations :

5

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant