BUK7880-55,135

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±16V

Terminal Position :

Dual

Additional Feature :

LOGIC LEVEL COMPATIBLE

Turn Off Time-Max (toff) :

45ns

Drain to Source Voltage (Vdss) :

55V

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

7.5A

Number of Terminations :

4

Pulsed Drain Current-Max (IDM) :

40A

Case Connection :

DRAIN

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

4

Power Dissipation-Max :

1.8W Ta

Package / Case :

TO-261-4, TO-261AA

Packaging :

Tape and Reel (TR)

Turn On Time-Max (ton) :

39ns

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

HTS Code :

8541.29.00.75

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

80m Ω @ 5A, 10V

JESD-30 Code :

R-PDSO-G4

Drain-source On Resistance-Max :

0.08Ohm

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

40

Qualification Status :

Not Qualified

Number of Elements :

1

Feedback Cap-Max (Crss) :

85 pF

ECCN Code :

EAR99

Surface Mount :

yes

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds :

500pF @ 25V

DS Breakdown Voltage-Min :

55V

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

30 mJ

Peak Reflow Temperature (Cel) :

260

FET Type :

N-Channel

Series :

Automotive, AEC-Q101, TrenchMOS™

Current - Continuous Drain (Id) @ 25°C :

3.5A Ta

Published :

1998