BUK78150-55A115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.15Ohm

Pin Count :

4

Number of Terminations :

4

Published :

2010

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

JESD-30 Code :

R-PDSO-G4

HTS Code :

8541.29.00.75

Series :

Automotive, AEC-Q101, TrenchMOS™

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

55V

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

5.5A

Package / Case :

TO-261-4, TO-261AA

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

4V @ 1mA

Pulsed Drain Current-Max (IDM) :

22A

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

230pF @ 25V

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Surface Mount :

yes

Terminal Position :

Dual

Avalanche Energy Rating (Eas) :

25 mJ

Power Dissipation-Max :

8W Tc

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

150m Ω @ 5A, 10V

DS Breakdown Voltage-Min :

55V

Transistor Application :

SWITCHING