BUK78150-55A/CUF
- Mfr.Part #
- BUK78150-55A/CUF
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 5.5A SOT223
- Stock
- 3,964
- In Stock :
- 3,964
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 230pF @ 25V
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 8 ns
- Number of Pins :
- 4
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±20V
- Published :
- 2010
- Turn On Delay Time :
- 3 ns
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 4
- Case Connection :
- DRAIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 0.15Ohm
- Continuous Drain Current (ID) :
- 5.5A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminations :
- 4
- Series :
- TrenchMOS™
- Avalanche Energy Rating (Eas) :
- 25 mJ
- Terminal Position :
- Dual
- DS Breakdown Voltage-Min :
- 55V
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 5.5A Tc
- Mount :
- Surface Mount
- Contact Plating :
- Tin
- Drain to Source Voltage (Vdss) :
- 55V
- Pulsed Drain Current-Max (IDM) :
- 22A
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 150m Ω @ 5A, 10V
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-261-4, TO-261AA
- Rise Time :
- 26ns
- Terminal Form :
- Gull wing
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 10 ns
- Factory Lead Time :
- 16 Weeks
- Power Dissipation-Max :
- 8W Tc
- Datasheets
- BUK78150-55A/CUF

N-Channel Tape & Reel (TR) 150m Ω @ 5A, 10V ±20V 230pF @ 25V 55V TO-261-4, TO-261AA
BUK78150-55A/CUF Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 25 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 230pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 5.5A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 8 ns.Peak drain current is 22A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 3 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 55V.For this transistor to work, a voltage 55V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
BUK78150-55A/CUF Features
the avalanche energy rating (Eas) is 25 mJ
a continuous drain current (ID) of 5.5A
the turn-off delay time is 8 ns
based on its rated peak drain current 22A.
a 55V drain to source voltage (Vdss)
BUK78150-55A/CUF Applications
There are a lot of Nexperia USA Inc.
BUK78150-55A/CUF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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