BUK766R0-60E,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds :

4520pF @ 25V

Reach Compliance Code :

not_compliant

Number of Terminations :

2

FET Type :

N-Channel

Number of Elements :

1

Transistor Element Material :

SILICON

Turn On Delay Time :

19 ns

Rise Time :

36ns

Rds On (Max) @ Id, Vgs :

6m Ω @ 25A, 10V

Power Dissipation :

182W

Continuous Drain Current (ID) :

75A

Factory Lead Time :

12 Weeks

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

34 ns

Terminal Position :

Single

Max Dual Supply Voltage :

60V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

38 ns

Transistor Application :

SWITCHING

Contact Plating :

Tin

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

AVALANCHE RATED

Pin Count :

3

Case Connection :

DRAIN

Number of Pins :

3

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Drain-source On Resistance-Max :

0.006Ohm

Mounting Type :

Surface Mount

Power Dissipation-Max :

182W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Published :

2014

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 10V

Series :

Automotive, AEC-Q101, TrenchMOS™