BUK7660-100A,118

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

16 Weeks

Transistor Element Material :

SILICON

Power Dissipation-Max :

106W Tc

Published :

2011

FET Type :

N-Channel

Case Connection :

DRAIN

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Power Dissipation :

106W

ECCN Code :

EAR99

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

110 mJ

Current - Continuous Drain (Id) @ 25°C :

26A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Continuous Drain Current (ID) :

26A

Input Capacitance (Ciss) (Max) @ Vds :

1377pF @ 25V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±20V

Contact Plating :

Tin

Rise Time :

45ns

Turn On Delay Time :

10 ns

Pulsed Drain Current-Max (IDM) :

106A

Rds On (Max) @ Id, Vgs :

60m Ω @ 15A, 10V

Gate to Source Voltage (Vgs) :

20V

Series :

Automotive, AEC-Q101, TrenchMOS™

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Number of Terminations :

2

Turn-Off Delay Time :

31 ns

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.06Ohm

Fall Time (Typ) :

20 ns

JESD-609 Code :

e3

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 1mA

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Max Dual Supply Voltage :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

HTS Code :

8541.29.00.75

JESD-30 Code :

R-PSSO-G2

Drain to Source Breakdown Voltage :

100V

Pin Count :

3

RoHS Status :

ROHS3 Compliant