BUK7660-100A,118
- Mfr.Part #
- BUK7660-100A,118
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- NEXPERIA BUK7660 - N-CHANNEL TRE
- Stock
- 1,703
- In Stock :
- 1,703
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 106W
- ECCN Code :
- EAR99
- Max Dual Supply Voltage :
- 100V
- Pulsed Drain Current-Max (IDM) :
- 106A
- JESD-609 Code :
- e3
- Turn-Off Delay Time :
- 31 ns
- Terminal Form :
- Gull wing
- Turn On Delay Time :
- 10 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 26A
- Power Dissipation-Max :
- 106W Tc
- Drain-source On Resistance-Max :
- 0.06Ohm
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Number of Terminations :
- 2
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 26A Tc
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 45ns
- Operating Temperature :
- -55°C~175°C TJ
- Rds On (Max) @ Id, Vgs :
- 60m Ω @ 15A, 10V
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 20 ns
- JESD-30 Code :
- R-PSSO-G2
- Case Connection :
- DRAIN
- Surface Mount :
- yes
- Transistor Element Material :
- SILICON
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Drain to Source Breakdown Voltage :
- 100V
- Published :
- 2011
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Packaging :
- Tape and Reel (TR)
- HTS Code :
- 8541.29.00.75
- Vgs (Max) :
- ±20V
- Factory Lead Time :
- 16 Weeks
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Radiation Hardening :
- No
- Avalanche Energy Rating (Eas) :
- 110 mJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 1377pF @ 25V
- Mounting Type :
- Surface Mount
- Datasheets
- BUK7660-100A,118

N-Channel Tape & Reel (TR) 60m Ω @ 15A, 10V ±20V 1377pF @ 25V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUK7660-100A,118 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 110 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1377pF @ 25V.This device has a continuous drain current (ID) of [26A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 31 ns.A maximum pulsed drain current of 106A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 100V.Its overall power consumption can be reduced by using drive voltage (10V).
BUK7660-100A,118 Features
the avalanche energy rating (Eas) is 110 mJ
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 31 ns
based on its rated peak drain current 106A.
BUK7660-100A,118 Applications
There are a lot of Nexperia USA Inc.
BUK7660-100A,118 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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