BUK7635-55A,118
- Mfr.Part #
- BUK7635-55A,118
- Manufacturer
- Nexperia
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 35A D2PAK
- Stock
- 119,183
- In Stock :
- 119,183
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 35m Ω @ 20A, 10V
- Packaging :
- Tape and Reel (TR)
- Published :
- 2011
- Input Capacitance (Ciss) (Max) @ Vds :
- 872pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Form :
- Gull wing
- Continuous Drain Current (ID) :
- 35A
- Power Dissipation-Max :
- 85W Tc
- Gate to Source Voltage (Vgs) :
- 20V
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PSSO-G2
- Turn-Off Delay Time :
- 24 ns
- Vgs (Max) :
- ±20V
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Current - Continuous Drain (Id) @ 25°C :
- 35A Tc
- Contact Plating :
- Tin
- Fall Time (Typ) :
- 20 ns
- Turn On Delay Time :
- 10 ns
- Case Connection :
- DRAIN
- Power Dissipation :
- 85W
- Element Configuration :
- Single
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 12 Weeks
- Max Dual Supply Voltage :
- 55V
- Number of Elements :
- 1
- Avalanche Energy Rating (Eas) :
- 49 mJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Operating Temperature :
- -55°C~175°C TJ
- Surface Mount :
- yes
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Number of Terminations :
- 2
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 55V
- Peak Reflow Temperature (Cel) :
- 260
- Rise Time :
- 62ns
- Datasheets
- BUK7635-55A,118

N-Channel Tape & Reel (TR) 35m Ω @ 20A, 10V ±20V 872pF @ 25V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUK7635-55A,118 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 49 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 872pF @ 25V.This device has a continuous drain current (ID) of [35A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=55V, the drain-source breakdown voltage is 55V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 24 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 55V.Its overall power consumption can be reduced by using drive voltage (10V).
BUK7635-55A,118 Features
the avalanche energy rating (Eas) is 49 mJ
a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 24 ns
BUK7635-55A,118 Applications
There are a lot of Nexperia USA Inc.
BUK7635-55A,118 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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