BUK762R6-40E118

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Power Dissipation-Max :

263W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.0026Ohm

Vgs (Max) :

±20V

Contact Plating :

Tin

Series :

Automotive, AEC-Q101, TrenchMOS™

Rds On (Max) @ Id, Vgs :

2.6m Ω @ 25A, 10V

Number of Elements :

1

Power Dissipation :

263W

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

100A Tc

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

920A

Fall Time (Typ) :

36 ns

Published :

2014

Terminal Position :

Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

29 ns

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

7130pF @ 25V

Case Connection :

DRAIN

FET Type :

N-Channel

Continuous Drain Current (ID) :

100A

Operating Mode :

ENHANCEMENT MODE

Max Dual Supply Voltage :

40V

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

574 mJ

Additional Feature :

AVALANCHE RATED

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

62 ns

Rise Time :

36ns

Factory Lead Time :

12 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

40V

Pin Count :

3

Vgs(th) (Max) @ Id :

4V @ 1mA

Number of Pins :

3

Reach Compliance Code :

not_compliant

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

91nC @ 10V