BUK762R4-60E,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Packaging :

Tape and Reel (TR)

Reach Compliance Code :

not_compliant

Gate Charge (Qg) (Max) @ Vgs :

158nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

11180pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.0024Ohm

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

120A

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Contact Plating :

Tin

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Series :

Automotive, AEC-Q101, TrenchMOS™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

357W Tc

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

36 ns

Turn-Off Delay Time :

130 ns

Fall Time (Typ) :

71 ns

Additional Feature :

AVALANCHE RATED

Factory Lead Time :

12 Weeks

Drain to Source Breakdown Voltage :

60V

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Gull wing

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 25A, 10V

Surface Mount :

yes

Vgs(th) (Max) @ Id :

4V @ 1mA

Number of Elements :

1

Power Dissipation :

357W

Configuration :

SINGLE WITH BUILT-IN DIODE

Max Dual Supply Voltage :

60V

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e3

Rise Time :

50ns

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

660 mJ

Vgs (Max) :

±20V

Published :

2014

FET Type :

N-Channel