BUK7623-75A,118
- Mfr.Part #
- BUK7623-75A,118
- Manufacturer
- Nexperia
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 53A D2PAK
- Stock
- 2,561
- In Stock :
- 2,561
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Rds On (Max) @ Id, Vgs :
- 23m Ω @ 25A, 10V
- Fall Time (Typ) :
- 41 ns
- Power Dissipation :
- 138W
- Drain to Source Breakdown Voltage :
- 75V
- JESD-30 Code :
- R-PSSO-G2
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- 1.1A
- Operating Temperature :
- -55°C~175°C TJ
- Gate to Source Voltage (Vgs) :
- 20V
- Pin Count :
- 3
- Number of Elements :
- 1
- Power Dissipation-Max :
- 138W Tc
- Published :
- 1997
- Factory Lead Time :
- 16 Weeks
- Rise Time :
- 66ns
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- DRAIN
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Number of Terminations :
- 2
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2385pF @ 25V
- Turn On Delay Time :
- 14 ns
- ECCN Code :
- EAR99
- Contact Plating :
- Tin
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 61 ns
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Radiation Hardening :
- No
- FET Type :
- N-Channel
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Max Dual Supply Voltage :
- 75V
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 53A Tc
- Datasheets
- BUK7623-75A,118

N-Channel Tape & Reel (TR) 23m Ω @ 25A, 10V ±20V 2385pF @ 25V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUK7623-75A,118 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2385pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 1.1A amps.In this device, the drain-source breakdown voltage is 75V and VGS=75V, so the drain-source breakdown voltage is 75V in this case.It is [61 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 14 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 75V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (10V).
BUK7623-75A,118 Features
a continuous drain current (ID) of 1.1A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 61 ns
BUK7623-75A,118 Applications
There are a lot of Nexperia USA Inc.
BUK7623-75A,118 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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