BUK7620-100A,118
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- Mfr.Part #
- BUK7620-100A,118
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- NEXPERIA BUK7620 - TRANSISTOR >3
- Stock
- 3,408
- In Stock ：
- 3,408
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 200W Tc
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- DRAIN
- Mounting Type :
- Surface Mount
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Published :
- 2011
- Vgs (Max) :
- ±20V
- Contact Plating :
- Tin
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Continuous Drain Current (ID) :
- 63A
- Fall Time (Typ) :
- 56 ns
- Rds On (Max) @ Id, Vgs :
- 20m Ω @ 25A, 10V
- Drain to Source Breakdown Voltage :
- 100V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 4373pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Rise Time :
- 87ns
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 200W
- Drain-source On Resistance-Max :
- 0.02Ohm
- Factory Lead Time :
- 16 Weeks
- Turn On Delay Time :
- 21 ns
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Surface Mount :
- yes
- JESD-30 Code :
- R-PSSO-G2
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Max Dual Supply Voltage :
- 100V
- Gate to Source Voltage (Vgs) :
- 20V
- Turn-Off Delay Time :
- 108 ns
- Current - Continuous Drain (Id) @ 25°C :
- 63A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 2
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~175°C TJ
- Avalanche Energy Rating (Eas) :
- 400 mJ
- Datasheets
- BUK7620-100A,118
N-Channel Tape & Reel (TR) 20m Ω @ 25A, 10V ±20V 4373pF @ 25V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUK7620-100A,118 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 400 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4373pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 100V.As a result of its turn-off delay time, which is 108 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 21 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 100V.In addition to reducing power consumption, this device uses drive voltage (10V).
BUK7620-100A,118 Features
the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 63A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 108 ns
BUK7620-100A,118 Applications
There are a lot of Nexperia USA Inc.
BUK7620-100A,118 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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