BUK761R6-40E,118
- Mfr.Part #
- BUK761R6-40E,118
- Manufacturer
- Nexperia
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 120A D2PAK
- Stock
- 248
- In Stock :
- 248
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 12 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 145nC @ 10V
- JESD-609 Code :
- e3
- Power Dissipation-Max :
- 349W Tc
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 357W
- JESD-30 Code :
- R-PSSO-G2
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 120A
- Surface Mount :
- yes
- Drain to Source Breakdown Voltage :
- 40V
- Published :
- 2012
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 42 ns
- Fall Time (Typ) :
- 83 ns
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 11340pF @ 25V
- Mounting Type :
- Surface Mount
- Turn-Off Delay Time :
- 121 ns
- Max Dual Supply Voltage :
- 40V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 1.6m Ω @ 25A, 10V
- Terminal Finish :
- Tin (Sn)
- Reach Compliance Code :
- not_compliant
- Vgs (Max) :
- ±20V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Position :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Rise Time :
- 60ns
- Gate to Source Voltage (Vgs) :
- 4V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Drain-source On Resistance-Max :
- 0.0016Ohm
- Avalanche Energy Rating (Eas) :
- 1008 mJ
- Terminal Form :
- Gull wing
- Pin Count :
- 3
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- FET Type :
- N-Channel
- Additional Feature :
- AVALANCHE RATED
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~175°C TJ
- Number of Terminations :
- 2
- Number of Elements :
- 1
- Datasheets
- BUK761R6-40E,118

N-Channel Tape & Reel (TR) 1.6m Ω @ 25A, 10V ±20V 11340pF @ 25V 145nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUK761R6-40E,118 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1008 mJ.A device's maximum input capacitance is 11340pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 120A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=40V, and this device has a drain-to-source breakdown voltage of 40V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 121 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 42 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 4V.Powered by 40V, it supports maximum dual supply voltages.This device uses no drive voltage (10V) to reduce its overall power consumption.
BUK761R6-40E,118 Features
the avalanche energy rating (Eas) is 1008 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 121 ns
BUK761R6-40E,118 Applications
There are a lot of Nexperia USA Inc.
BUK761R6-40E,118 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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