BUK7616-55A,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

263A

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin

Packaging :

Tape and Reel (TR)

Series :

TrenchMOS™

ECCN Code :

EAR99

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Single

Power Dissipation-Max :

138W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

120 mJ

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rds On (Max) @ Id, Vgs :

16m Ω @ 25A, 10V

Time@Peak Reflow Temperature-Max (s) :

40

Published :

1997

Drain-source On Resistance-Max :

0.016Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

2245pF @ 25V

Reach Compliance Code :

Unknown

Current - Continuous Drain (Id) @ 25°C :

65.7A Tc

Number of Terminations :

2

Vgs(th) (Max) @ Id :

4V @ 1mA

Case Connection :

DRAIN

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

FET Type :

N-Channel

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

55V

Drain to Source Voltage (Vdss) :

55V

Drain Current-Max (Abs) (ID) :

65.7A

Surface Mount :

yes

Pin Count :

3

JESD-30 Code :

R-PSSO-G2