BUK7614-55A,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

73A Tc

Peak Reflow Temperature (Cel) :

260

HTS Code :

8541.29.00.75

JESD-609 Code :

e3

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Terminal Form :

Gull wing

Qualification Status :

Not Qualified

Reach Compliance Code :

not_compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id :

4V @ 1mA

FET Type :

N-Channel

Surface Mount :

yes

Terminal Finish :

Tin (Sn)

JESD-30 Code :

R-PSSO-G2

Drain-source On Resistance-Max :

0.014Ohm

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

55V

Input Capacitance (Ciss) (Max) @ Vds :

2464pF @ 25V

Power Dissipation-Max :

166W Tc

Pin Count :

3

Published :

1999

DS Breakdown Voltage-Min :

55V

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

125 mJ

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

266A

Series :

Automotive, AEC-Q101, TrenchMOS™

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

40

Rds On (Max) @ Id, Vgs :

14m Ω @ 25A, 10V

Drain Current-Max (Abs) (ID) :

73A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2