BUK7613-75B,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

2644pF @ 25V

Surface Mount :

yes

Case Connection :

DRAIN

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Max Dual Supply Voltage :

75V

ECCN Code :

EAR99

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Series :

Automotive, AEC-Q101, TrenchMOS™

Terminal Form :

Gull wing

Radiation Hardening :

No

Power Dissipation :

157W

Turn-Off Delay Time :

55 ns

Number of Terminations :

2

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

36ns

Vgs(th) (Max) @ Id :

4V @ 1mA

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSSO-G2

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Turn On Delay Time :

18 ns

Number of Elements :

1

Contact Plating :

Tin

Factory Lead Time :

12 Weeks

Continuous Drain Current (ID) :

75A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Published :

2011

Number of Pins :

3

Fall Time (Typ) :

26 ns

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

75V

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Rds On (Max) @ Id, Vgs :

13m Ω @ 25A, 10V

Power Dissipation-Max :

157W Tc