BUK7611-55B,118

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

45ns

Turn-Off Delay Time :

41 ns

ECCN Code :

EAR99

Element Configuration :

Single

Vgs(th) (Max) @ Id :

4V @ 1mA

Power Dissipation-Max :

157W Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Input Capacitance (Ciss) (Max) @ Vds :

2604pF @ 25V

Turn On Delay Time :

11 ns

Case Connection :

DRAIN

Published :

2011

Drain to Source Breakdown Voltage :

55V

Gate Charge (Qg) (Max) @ Vgs :

37nC @ 10V

Contact Plating :

Tin

Radiation Hardening :

No

HTS Code :

8541.29.00.75

Fall Time (Typ) :

27 ns

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

11m Ω @ 25A, 10V

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

75A

Continuous Drain Current (ID) :

84A

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

12 Weeks

Vgs (Max) :

±20V

Surface Mount :

yes

Max Dual Supply Voltage :

55V

Power Dissipation :

157W

Series :

Automotive, AEC-Q101, TrenchMOS™

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.011Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2