BUK7610-100B,118
- Mfr.Part #
- BUK7610-100B,118
- Manufacturer
- Nexperia
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 75A D2PAK
- Stock
- 7,364
- In Stock :
- 7,364
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Form :
- Gull wing
- Gate to Source Voltage (Vgs) :
- 20V
- Published :
- 2012
- Power Dissipation :
- 300W
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain Current-Max (Abs) (ID) :
- 75A
- Factory Lead Time :
- 12 Weeks
- JESD-30 Code :
- R-PSSO-G2
- Max Dual Supply Voltage :
- 100V
- Vgs (Max) :
- ±20V
- Surface Mount :
- yes
- Number of Pins :
- 3
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Case Connection :
- DRAIN
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 80nC @ 10V
- Turn-Off Delay Time :
- 120 ns
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- 100V
- Turn On Delay Time :
- 33 ns
- Radiation Hardening :
- No
- Fall Time (Typ) :
- 36 ns
- Number of Terminations :
- 2
- JESD-609 Code :
- e3
- Avalanche Energy Rating (Eas) :
- 629 mJ
- Continuous Drain Current (ID) :
- 110A
- Packaging :
- Tape and Reel (TR)
- Rise Time :
- 45ns
- Power Dissipation-Max :
- 300W Tc
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 6773pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 10m Ω @ 25A, 10V
- Mounting Type :
- Surface Mount
- Contact Plating :
- Tin
- Datasheets
- BUK7610-100B,118

N-Channel Tape & Reel (TR) 10m Ω @ 25A, 10V ±20V 6773pF @ 25V 80nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUK7610-100B,118 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 629 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 6773pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 110A.With a drain-source breakdown voltage of 100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 100V.75A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 120 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 33 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.This device supports dual supply voltages maximally powered by 100V.Using drive voltage (10V) reduces this device's overall power consumption.
BUK7610-100B,118 Features
the avalanche energy rating (Eas) is 629 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 120 ns
BUK7610-100B,118 Applications
There are a lot of Nexperia USA Inc.
BUK7610-100B,118 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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