BUK7609-75A,118
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- Mfr.Part #
- BUK7609-75A,118
- Manufacturer
- Nexperia
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 75A D2PAK
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Turn On Delay Time :
- 35 ns
- Max Dual Supply Voltage :
- 75V
- Surface Mount :
- yes
- Factory Lead Time :
- 16 Weeks
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Number of Terminations :
- 2
- Power Dissipation :
- 211W
- Drain-source On Resistance-Max :
- 0.009Ohm
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- JESD-30 Code :
- R-PSSO-G2
- Continuous Drain Current (ID) :
- 75A
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Avalanche Energy Rating (Eas) :
- 560 mJ
- Vgs (Max) :
- ±20V
- Pulsed Drain Current-Max (IDM) :
- 440A
- Published :
- 2011
- Terminal Form :
- Gull wing
- Power Dissipation-Max :
- 230W Tc
- Rise Time :
- 58ns
- Case Connection :
- DRAIN
- Pin Count :
- 3
- Contact Plating :
- Tin
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- N-Channel
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Operating Mode :
- ENHANCEMENT MODE
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 6760pF @ 25V
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~175°C TJ
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 78 ns
- Drain to Source Breakdown Voltage :
- 55V
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 25A, 10V
- Fall Time (Typ) :
- 55 ns
- Datasheets
- BUK7609-75A,118
N-Channel Tape & Reel (TR) 9m Ω @ 25A, 10V ±20V 6760pF @ 25V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUK7609-75A,118 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 560 mJ.The maximum input capacitance of this device is 6760pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 75A.When VGS=55V, and ID flows to VDS at 55VVDS, the drain-source breakdown voltage is 55V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 78 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 440A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 35 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 75V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (10V), this device helps reduce its power consumption.
BUK7609-75A,118 Features
the avalanche energy rating (Eas) is 560 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 78 ns
based on its rated peak drain current 440A.
BUK7609-75A,118 Applications
There are a lot of Nexperia USA Inc.
BUK7609-75A,118 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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