BUK7607-55B,118
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- Mfr.Part #
- BUK7607-55B,118
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- NOW NEXPERIA BUK7607-55B - 119A,
- Stock
- 42,895
- In Stock ：
- 42,895
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 203W
- Number of Terminations :
- 2
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Max Dual Supply Voltage :
- 55V
- Drain to Source Breakdown Voltage :
- 55V
- Case Connection :
- DRAIN
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Form :
- Gull wing
- Rise Time :
- 52ns
- Contact Plating :
- Tin
- Fall Time (Typ) :
- 41 ns
- Turn On Delay Time :
- 24 ns
- Pulsed Drain Current-Max (IDM) :
- 478A
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 119A
- Radiation Hardening :
- No
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Surface Mount :
- yes
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Factory Lead Time :
- 12 Weeks
- Power Dissipation-Max :
- 203W Tc
- Published :
- 2011
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 7.1m Ω @ 25A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSSO-G2
- Gate Charge (Qg) (Max) @ Vgs :
- 53nC @ 10V
- Turn-Off Delay Time :
- 77 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 3760pF @ 25V
- Datasheets
- BUK7607-55B,118
N-Channel Tape & Reel (TR) 7.1m Ω @ 25A, 10V ±20V 3760pF @ 25V 53nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUK7607-55B,118 Overview
A device's maximum input capacitance is 3760pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 119A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=55V, and this device has a drain-to-source breakdown voltage of 55V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 77 ns.Its maximum pulsed drain current is 478A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 24 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 55V, it supports maximum dual supply voltages.This device uses no drive voltage (10V) to reduce its overall power consumption.
BUK7607-55B,118 Features
a continuous drain current (ID) of 119A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 77 ns
based on its rated peak drain current 478A.
BUK7607-55B,118 Applications
There are a lot of Nexperia USA Inc.
BUK7607-55B,118 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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