BUK7606-75B,118

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Max Dual Supply Voltage :

75V

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.0056Ohm

Published :

2011

Number of Terminations :

2

Terminal Form :

Gull wing

Lead Free :

Lead Free

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 1mA

Fall Time (Typ) :

48 ns

Case Connection :

DRAIN

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

300W Tc

Power Dissipation :

300W

Avalanche Energy Rating (Eas) :

852 mJ

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

7446pF @ 25V

Surface Mount :

yes

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins :

3

Turn On Delay Time :

36 ns

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

91nC @ 10V

Contact Plating :

Tin

Rise Time :

56ns

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

159A

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

75A

Rds On (Max) @ Id, Vgs :

5.6m Ω @ 25A, 10V

Turn-Off Delay Time :

128 ns

Transistor Element Material :

SILICON

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Series :

Automotive, AEC-Q101, TrenchMOS™

Factory Lead Time :

12 Weeks

JESD-609 Code :

e3

Transistor Application :

SWITCHING

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

75V