BUK7606-55B,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

110 ns

Turn-Off Delay Time :

155 ns

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

582A

Power Dissipation :

300W

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

64nC @ 10V

HTS Code :

8541.29.00.75

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Series :

Automotive, AEC-Q101, TrenchMOS™

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

Turn On Delay Time :

30 ns

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.006Ohm

Factory Lead Time :

12 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

254W Tc

Number of Elements :

1

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

6m Ω @ 25A, 10V

Number of Terminations :

2

FET Type :

N-Channel

Element Configuration :

Single

Drain Current-Max (Abs) (ID) :

145A

Input Capacitance (Ciss) (Max) @ Vds :

5100pF @ 25V

Number of Pins :

3

JESD-30 Code :

R-PSSO-G2

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Gate to Source Voltage (Vgs) :

20V

Max Dual Supply Voltage :

55V

Rise Time :

115ns

Surface Mount :

yes

Pin Count :

3

Drain to Source Breakdown Voltage :

55V

Contact Plating :

Tin

Terminal Form :

Gull wing

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

680 mJ

Continuous Drain Current (ID) :

75A

Vgs(th) (Max) @ Id :

4V @ 1mA

Published :

2010