BUK7606-55A,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Number of Terminations :

2

Fall Time (Typ) :

110 ns

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Number of Elements :

1

Drain to Source Breakdown Voltage :

55V

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

300W

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

154A

Input Capacitance (Ciss) (Max) @ Vds :

6000pF @ 25V

Published :

2011

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn On Delay Time :

35 ns

Surface Mount :

yes

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

4V @ 1mA

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

75A

Turn-Off Delay Time :

155 ns

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

300W Tc

Rds On (Max) @ Id, Vgs :

6.3m Ω @ 25A, 10V

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Series :

Automotive, AEC-Q101, TrenchMOS™

Element Configuration :

Single

Max Dual Supply Voltage :

55V

Case Connection :

DRAIN

Number of Pins :

3

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Rise Time :

115ns

Factory Lead Time :

12 Weeks

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Contact Plating :

Tin

Drive Voltage (Max Rds On,Min Rds On) :

10V