BUK7575-55A,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-220-3

Contact Plating :

Tin

Power Dissipation :

62W

Input Capacitance (Ciss) (Max) @ Vds :

483pF @ 25V

Radiation Hardening :

No

Series :

TrenchMOS™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

50ns

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

70 ns

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

81A

Transistor Application :

SWITCHING

Number of Pins :

3

JEDEC-95 Code :

TO-220AB

Power Dissipation-Max :

62W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 1mA

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

55V

Element Configuration :

Single

HTS Code :

8541.29.00.75

Case Connection :

DRAIN

Surface Mount :

No

Fall Time (Typ) :

40 ns

Max Dual Supply Voltage :

55V

Drain-source On Resistance-Max :

0.075Ohm

Rds On (Max) @ Id, Vgs :

75m Ω @ 10A, 10V

Published :

2010

Number of Terminations :

3

JESD-609 Code :

e3

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Continuous Drain Current (ID) :

20.3A

Current - Continuous Drain (Id) @ 25°C :

20.3A Tc

Turn On Delay Time :

10 ns

Pin Count :

3

Packaging :

Tube

ECCN Code :

EAR99