BUK7575-55A,127
- Mfr.Part #
- BUK7575-55A,127
- Manufacturer
- Nexperia
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 20.3A TO220AB
- Stock
- 150
- In Stock :
- 150
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Published :
- 2010
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 483pF @ 25V
- Contact Plating :
- Tin
- Number of Pins :
- 3
- Pulsed Drain Current-Max (IDM) :
- 81A
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 20.3A
- Vgs (Max) :
- ±20V
- RoHS Status :
- RoHS Compliant
- Max Dual Supply Voltage :
- 55V
- Fall Time (Typ) :
- 40 ns
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 0.075Ohm
- Operating Temperature :
- -55°C~175°C TJ
- Gate to Source Voltage (Vgs) :
- 20V
- Surface Mount :
- No
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 55V
- Current - Continuous Drain (Id) @ 25°C :
- 20.3A Tc
- HTS Code :
- 8541.29.00.75
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- Rds On (Max) @ Id, Vgs :
- 75m Ω @ 10A, 10V
- Package / Case :
- TO-220-3
- Power Dissipation :
- 62W
- Rise Time :
- 50ns
- Packaging :
- Tube
- Turn-Off Delay Time :
- 70 ns
- Number of Elements :
- 1
- JEDEC-95 Code :
- TO-220AB
- Radiation Hardening :
- No
- FET Type :
- N-Channel
- Turn On Delay Time :
- 10 ns
- Power Dissipation-Max :
- 62W Tc
- Number of Terminations :
- 3
- Series :
- TrenchMOS™
- ECCN Code :
- EAR99
- Datasheets
- BUK7575-55A,127

N-Channel Tube 75m Ω @ 10A, 10V ±20V 483pF @ 25V TO-220-3
BUK7575-55A,127 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 483pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 20.3A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 55V, and this device has a drainage-to-source breakdown voltage of 55VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 70 ns.Peak drain current is 81A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In addition to 55V, it supports dual voltages up to the maximum.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
BUK7575-55A,127 Features
a continuous drain current (ID) of 20.3A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 81A.
BUK7575-55A,127 Applications
There are a lot of Nexperia USA Inc.
BUK7575-55A,127 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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