BUK7575-100A,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

100V

Power Dissipation :

99W

Transistor Element Material :

SILICON

Length :

6.35mm

ECCN Code :

EAR99

Number of Elements :

1

Radiation Hardening :

No

Max Dual Supply Voltage :

100V

Continuous Drain Current (ID) :

200mA

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4V @ 1mA

Mount :

Through Hole

Contact Plating :

Tin

Element Configuration :

Single

Fall Time (Typ) :

24 ns

Operating Temperature :

-55°C~175°C TJ

Width :

6.35mm

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

26 ns

Packaging :

Tube

Pin Count :

3

Weight :

4.535924g

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

23A Tc

JEDEC-95 Code :

TO-220AB

Power Dissipation-Max :

99W Tc

Drain-source On Resistance-Max :

0.075Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

RoHS Compliant

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

92A

Number of Terminations :

3

Height :

6.35mm

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

1210pF @ 25V

Package / Case :

TO-220-3

Vgs (Max) :

±20V

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

75m Ω @ 13A, 10V

Rise Time :

39ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

TrenchMOS™

FET Type :

N-Channel

Turn On Delay Time :

8 ns