BUK755R2-40B,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Element Configuration :

Single

Number of Terminations :

3

Power Dissipation :

203W

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.0052Ohm

JEDEC-95 Code :

TO-220AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Turn-Off Delay Time :

81 ns

Max Dual Supply Voltage :

40V

ECCN Code :

EAR99

Number of Elements :

1

Drain to Source Breakdown Voltage :

40V

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

494 mJ

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

5.2m Ω @ 25A, 10V

Power Dissipation-Max :

203W Tc

Vgs(th) (Max) @ Id :

4V @ 1mA

Packaging :

Tube

Rise Time :

51ns

Mounting Type :

Through Hole

Number of Pins :

3

Contact Plating :

Tin

Continuous Drain Current (ID) :

143A

Turn On Delay Time :

15 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-220-3

Input Capacitance (Ciss) (Max) @ Vds :

3789pF @ 25V

Surface Mount :

No

RoHS Status :

RoHS Compliant

Drain Current-Max (Abs) (ID) :

75A

Operating Mode :

ENHANCEMENT MODE

Series :

TrenchMOS™

JESD-609 Code :

e3

Pin Count :

3

Radiation Hardening :

No

Fall Time (Typ) :

56 ns