BUK7540-100A,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

100V

Transistor Element Material :

SILICON

Surface Mount :

No

Vgs (Max) :

±20V

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

100V

Current - Continuous Drain (Id) @ 25°C :

37A Tc

Published :

1999

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

2293pF @ 25V

Number of Terminations :

3

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

JESD-30 Code :

R-PSFM-T3

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

HTS Code :

8541.29.00.75

Series :

TrenchMOS™

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-220-3

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 1mA

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

40m Ω @ 40A, 10V

JEDEC-95 Code :

TO-220AB

FET Type :

N-Channel

Terminal Position :

Single

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

138W Tc

Pulsed Drain Current-Max (IDM) :

149A

Avalanche Energy Rating (Eas) :

31 mJ

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube

Drain-source On Resistance-Max :

0.04Ohm

Drain Current-Max (Abs) (ID) :

37A

ECCN Code :

EAR99