BUK753R1-40E,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

79nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 1mA

Number of Channels :

1

Fall Time (Typ) :

32 ns

Continuous Drain Current (ID) :

100A

Rise Time :

29ns

Published :

2012

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Package / Case :

TO-220-3

Weight :

6.000006g

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

3.1m Ω @ 25A, 10V

JEDEC-95 Code :

TO-220AB

Max Dual Supply Voltage :

40V

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Drain to Source Breakdown Voltage :

40V

Number of Elements :

1

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

798A

Input Capacitance (Ciss) (Max) @ Vds :

6200pF @ 25V

Number of Terminations :

3

Number of Pins :

3

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

12 Weeks

Additional Feature :

AVALANCHE RATED

Power Dissipation-Max :

234W Tc

Pin Count :

3

Vgs (Max) :

±20V

Turn-Off Delay Time :

54 ns

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

not_compliant

Mounting Type :

Through Hole

Series :

Automotive, AEC-Q101, TrenchMOS™

Turn On Delay Time :

24 ns

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V