BUK7535-100A,127
- Mfr.Part #
- BUK7535-100A,127
- Manufacturer
- Nexperia
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 41A TO220AB
- Stock
- 32,496
- In Stock :
- 32,496
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Through Hole
- Fall Time (Typ) :
- 35 ns
- Rds On (Max) @ Id, Vgs :
- 35m Ω @ 25A, 10V
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation :
- 149W
- Series :
- TrenchMOS™
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C~175°C TJ
- Number of Elements :
- 1
- RoHS Status :
- RoHS Compliant
- Package / Case :
- TO-220-3
- Input Capacitance (Ciss) (Max) @ Vds :
- 2535pF @ 25V
- Turn On Delay Time :
- 15 ns
- Drain to Source Breakdown Voltage :
- 100V
- Packaging :
- Tube
- Contact Plating :
- Tin
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Continuous Drain Current (ID) :
- 41A
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 41A Tc
- Power Dissipation-Max :
- 149W Tc
- Pulsed Drain Current-Max (IDM) :
- 165A
- JEDEC-95 Code :
- TO-220AB
- Number of Terminations :
- 3
- Max Dual Supply Voltage :
- 100V
- Surface Mount :
- No
- Turn-Off Delay Time :
- 56 ns
- HTS Code :
- 8541.29.00.75
- Case Connection :
- DRAIN
- FET Type :
- N-Channel
- Rise Time :
- 67ns
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Avalanche Energy Rating (Eas) :
- 110 mJ
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Datasheets
- BUK7535-100A,127

N-Channel Tube 35m Ω @ 25A, 10V ±20V 2535pF @ 25V TO-220-3
BUK7535-100A,127 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 110 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2535pF @ 25V.This device has a continuous drain current (ID) of [41A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 56 ns.A maximum pulsed drain current of 165A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 15 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 100V.Its overall power consumption can be reduced by using drive voltage (10V).
BUK7535-100A,127 Features
the avalanche energy rating (Eas) is 110 mJ
a continuous drain current (ID) of 41A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 56 ns
based on its rated peak drain current 165A.
BUK7535-100A,127 Applications
There are a lot of Nexperia USA Inc.
BUK7535-100A,127 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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